Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography

Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography

著者名:

掲載資料名:

Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

725

発行年:

2012

開始ページ:

3

終了ページ:

6

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054212
シリーズID:	PA00000012
会議名:	International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
回次:	14th
会議開催地:	Miyazaki, Japan
会議開催年:	2011.09.25-2011.09.29
論文注記:	14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan

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1 国際会議録 X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC R. Tanuma, D. Mori, I. Kamata, H. Tsuchida Trans Tech Publications	7 国際会議録 Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers I. Kamata, X. Zhang, H. Tsuchida Trans Tech Publications
2 国際会議録 Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers I. Kamata, M. Nagano, H. Tsuchida Trans Tech Publications	8 国際会議録 Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures X. Zhang, M. Nagano, H. Tsuchida Trans Tech Publications
3 国際会議録 Three-Dimensional Imaging of Extended Defects in 4H-SiC R. Tanuma, M. Nagano, I. Kamata, H. Tsuchida Trans Tech Publications	9 国際会議録 Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers M. Nagano, I. Kamata, H. Tsuchida Trans Tech Publications
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5 国際会議録 High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers I. Kamata, M. Nagano, H. Tsuchida, Y. Chen, M. Dudley Trans Tech Publications	11 国際会議録 Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry H. Matsuhata, H. Yamaguchi, I. Nagai, T. Ohno, R. Kosugi Trans Tech Publications
6 国際会議録 Three-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic Generation R. Tanuma, H. Tsuchida Trans Tech Publications	12 国際会議録 Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography R. Tanuma, T. Tamori, Y. Yonezawa, H. Yamaguchi, H. Matsuhata Trans Tech Publications

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