High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

2

開始ページ:

1065

終了ページ:

1068

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

類似資料:

1 国際会議録 Performance of 60 A, 1200 V 4H-SiC DMOSFETs B.A. Hull, C. Jonas, S.H. Ryu, M.K. Das, M.J. O'Loughlin Trans Tech Publications	7 国際会議録 Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs S.H. Ryu, B.A. Hull, S. Dhar, L. Cheng, Q.C.J. Zhang Trans Tech Publications
2 国際会議録 1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation B.A. Hull, S.H. Ryu, J. Zhang, C. Jonas, M.J. O'Loughlin Trans Tech Publications	8 国際会議録 A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs S.H. Ryu, S. Krishnaswami, B.A. Hull, B. Heath, F. Husna, J. Richmond, A. Agarwal, J. Palmour, J. Scofield Trans Tech Publications
3 国際会議録 16 kV, 1 cm², 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications L. Cheng, A.K. Agarwal, M. O'Loughlin, C. Capell, K. Lam Trans Tech Publications	9 国際会議録 20 kV 4H-SiC N-IGBTs S.H. Ryu, C. Capell, C. Jonas, M.J. O'Loughlin, J. Clayton Trans Tech Publications
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5 国際会議録 Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor S.H. Ryu, D.J. Lichtenwalner, E. van Brunt, C. Capell, M.J. O'Loughlin, C. Jonas, Y. Lemma, J. Zhang, J. Richmond, A.A. … Trans Tech Publications	11 国際会議録 Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes Q.C. Zhang, A. Agarwal, A.A. Burk, M.J. O'Loughlin, J. Palmour Trans Tech Publications
6 国際会議録 Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications D.A. Gajewski, S.H. Ryu, M. Das, B. Hull, J. Young Trans Tech Publications	12 国際会議録 1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer S.H. Ryu, C. Jonas, C. Capell, Y. Lemma, A. Agarwal Trans Tech Publications

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