The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC

The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

2

開始ページ:

833

終了ページ:

836

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

類似資料:

1 国際会議録 Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers A.V. Kuchuk, M. Guziewicz, R. Ratajczak, M. Wzorek, V.P. Kladko Trans Tech Publications	7 国際会議録 ON THE OHMIC CONTACT FORMATION MECHANISM IN THE Au/Te/n-GaAS SYSTEM Wuyts, K., Langouche, G., Vanderstraeten, H., Silverans, R. E., Van Hove, M., Van Rossum, M., Munder, H., Luth, H. Materials Research Society
2 国際会議録 On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC A.V. Kuchuk, V.P. Kladko, A. Piotrowska, R. Ratajczak, R. Jakiela Trans Tech Publications	8 国際会議録 Ni/Si-Based Ohmic Contacts to p- and n-Type GaN Kaminska, E., Piotrowska, A., Barcz, A., Guziewicz, M., Kasjaniuk, S., Bremser, M. D., Davis, R. F., Dynowska, E., … MRS - Materials Research Society
3 国際会議録 Characteristics of Gold Wire Bonds with Ti- and Ni-Based Contact Metallization to n-SiC for High Temperature Applications M. Guziewicz, R. Kisiel, K. Gołaszewska, M. Wzorek, A. Stonert Trans Tech Publications	9 国際会議録 A UHV Study of Ni/SiC Schottky Barrier and Ohmic Contact Formation Kestle, A., Wilks, S. P., Dunstan, P. R., Pritchard, M., Pope, G., Koh, A., Mawby, P. A. Trans Tech Publications
4 国際会議録 Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS M. Wzorek, A. Czerwiński, J. Ratajczak, M.A. Borysiewicz, A.V. Kuchuk Trans Tech Publications	10 国際会議録 Structural Processes in Gold-Based Metallization during the Formation of Ohmic Contacts to GaSb Piotrowska, A., Kaminska, E., Guziewicz, M., Mizera, E., Dynowska, E., Lin, X. W., Rouvimov, S., Liliental-Weber, Z., … MRS - Materials Research Society
5 国際会議録 Titanium-Based Ohmic Contact on p-Type 4H-SiC Jung, K.H., Cho, N.I., Lee, J.H., Yang, S.J., Kim, C.K., Lee, B.-T., Rim, K.H., Kim, N.-K., Kim, E.-D. Trans Tech Publications	11 国際会議録 Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC P. Fedeli, M. Puzzanghera, F. Moscatelli, R.A. Minamisawa, G. Alfieri, U. Grossner, R. Nipoti Trans Tech Publications
6 国際会議録 Titanium-Based Ohmic Contact on p-Type 4H-SiC Jung, K.H., Cho, N.I., Lee, J.H., Yang, S.J., Kim, C.K., Lee, B.-T., Rim, K.H., Kim, N.-K., Kim, E.-D. Trans Tech Publications	12 国際会議録 Formation and Thermal Stability of Ni/Wsi/Ti/Pt Composite Ohmic Contacts to n-SiC for High Power Device Applications Cole, M.W., Joshi, P.C., Hubbard, C.W., Demaree, D.J., Wood, M.C., Ervin, M.H., Ren, F. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12