High Dose Al<sup>+</sup> Implanted and Microwave Annealed 4H-SiC

High Dose Al⁺ Implanted and Microwave Annealed 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

2

開始ページ:

817

終了ページ:

820

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

類似資料:

1 国際会議録 Microwave Annealing of Al⁺ Implanted 4H-SiC: Towards Device Fabrication A. Nath, A. Parisini, Y.L. Tian, M.V. Rao, R. Nipoti Trans Tech Publications	7 国際会議録 Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors M.V. Rao, Y.L. Tian, S.B. Qadri, J.A. Freitas Jr., R. Nipoti Trans Tech Publications
2 国際会議録 Improving Doping Efficiency of P⁺ Implanted Ions in 4H-SiC R. Nipoti, A. Nath, S. Cristiani, M. Sanmartin, M.V. Rao Trans Tech Publications	8 国際会議録 Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers R. Nipoti, A. Nath, Y.L. Tian, F. Tamarri, F. Moscatelli Trans Tech Publications
3 国際会議録 Ion Implanted Lateral p⁺-i-n⁺ Diodes on HPSI 4H-SiC R. Nipoti, F. Moscatelli, A. Roncaglia, F. Bonafè, F. Mancarella Trans Tech Publications	9 国際会議録 Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC R. Nipoti, F. Mancarella, F. Moscatelli, R. Rizzoli, S. Zampolli Trans Tech Publications
4 国際会議録 Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC A. Nath, R. Scaburri, M.V. Rao, R. Nipoti Trans Tech Publications	10 国際会議録 Forward Current of Al⁺ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components M. Puzzanghera, R. Nipoti Trans Tech Publications
5 国際会議録 Al⁺ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts R. Nipoti, A. Hallén, A. Parisini, F. Moscatelli, S. Vantaggio Trans Tech Publications	11 国際会議録 J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600℃ Bergamini, F., Rao, S. P., Saddow, S. E., Nipoti, R. Trans Tech Publications
6 国際会議録 Al⁺ Implanted 4H-SiC p⁺-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation U. Grossner, F. Moscatelli, R. Nipoti Trans Tech Publications	12 国際会議録 Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose A. Poggi, F. Moscatelli, Y. Hijikata, S. Solmi, M. Sanmartin, F. Tamarri, R. Nipoti Trans Tech Publications

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High Dose Al+ Implanted and Microwave Annealed 4H-SiC

類似資料:

High Dose Al⁺ Implanted and Microwave Annealed 4H-SiC