Identification of Slow States at the SiO<sub>2</sub>/SiC Interface through Sub-Bandgap Illumination

Identification of Slow States at the SiO₂/SiC Interface through Sub-Bandgap Illumination

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

2

開始ページ:

801

終了ページ:

804

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

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1 国際会議録 Study of the Interface Properties of TiO₂/SiO₂/SiC by Photocapacitance M.H. Weng, S. Barker, R. Mahapatra, B.J.D. Furnival, N.G. Wright Trans Tech Publications	7 国際会議録 Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000-1) and 4H-SiC:H Surface J.P. Goss, P.R. Briddon, N.G. Wright, A.B. Horsfall Trans Tech Publications
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Identification of Slow States at the SiO2/SiC Interface through Sub-Bandgap Illumination

類似資料:

Identification of Slow States at the SiO₂/SiC Interface through Sub-Bandgap Illumination