The Effects of Phosphorus at the SiO<sub>2</sub>/4H-SiC Interface

The Effects of Phosphorus at the SiO₂/4H-SiC Interface

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

2

開始ページ:

743

終了ページ:

746

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

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1 国際会議録 Stable Phosphorus Passivated SiO₂/4H-SiC Interface Using Thin Oxides Y.K. Sharma, A.C. Ahyi, T. Issacs-Smith, M.R. Jennings, S.M. Thomas Trans Tech Publications	7 国際会議録 Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications
2 国際会議録 Oxidation-Induced Epilayer Carbon Di-Interstitials as a Major Cause of Endemically Poor Mobilities in 4H-SiC/SiO₂ Structures X. Shen, S.T. Pantelides Trans Tech Publications	8 国際会議録 Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications
3 国際会議録 Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface Dhar, S., Wang, S.R., Ahyi, A.C., Isaacs-Smith, T., Pantelides, S.T., Williams, J.R., Feldman, L.C. Trans Tech Publications	9 国際会議録 Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs - Challenges and Advances Pantelides, S.T., Wang, S., Franceschetti, A., Buczko, R., Di Ventra, M., Rashkeev, S.N., Tsetseris, L., Evans, M.H., … Trans Tech Publications
4 国際会議録 Combined N₂O and Phosphorus Passivations for the 4H-SiC/SiO₂ Interface with Oxide Grown at 1400°C H. Rong, Y.K. Sharma, P.A. Mawby Trans Tech Publications	10 国際会議録 Reduction of Density of 4H-SiC / SiO₂ Interface Traps by Pre-Oxidation Phosphorus Implantation T. Sledziewski, A. Mikhaylov, S. Reshanov, A. Schöner, H.B. Weber Trans Tech Publications
5 国際会議録 Thin PSG Process for 4H-SiC MOSFET Y.K. Sharma, A.C. Ahyi, T. Isaacs-Smith, A. Modic, Y. Xu Trans Tech Publications	11 国際会議録 Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2 Wang, W., Banerjee, S., Chow, T.P., Gutmann, R.J., Issacs-Smith, T., Williams, J., Jones, K.A., Lelis, A., Tipton, W., … Trans Tech Publications
6 国際会議録 Nitrogen Content and Interface Trap Reduction in SiO2/4H-SiC McDonald, K., Weller, R.A., Pantelides, S.T., Feldman, L.C., Chung, G.Y, Tin, C.C., Williams, J.R. Electrochemical Society	12 国際会議録 Atomic-Scale Engineering of the SiC-SiO2 Interface Pantelides, S. T., Duscher, G., Ventra, M. Di, Buczko, R., McDonald, K., Huang, M. B., Weller, R. A., Baumvol, I., … Trans Tech Publications

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The Effects of Phosphorus at the SiO2/4H-SiC Interface

類似資料:

The Effects of Phosphorus at the SiO₂/4H-SiC Interface