Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation

Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

1

開始ページ:

605

終了ページ:

608

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

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1 国際会議録 Surface Evolution of 4H-SiC(0001) during In Situ* Surface Preparation and its Influence on Graphene Properties* J. ul Hassan, A. Meyer, S. Cakmakyapan, O. Kazar, J. Ingo Flege Trans Tech Publications	7 国際会議録 Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer R. Karhu, I. Booker, I.G. Ivanov, E. Janzén, J. Ul Hassan Trans Tech Publications
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6 国際会議録 Carrier Mobility as a Function of Temperature in as-Grown and H-Intercalated Epitaxial Graphenes on 4H-SiC M. Winters, E.B. Thorsteinsson, E.Ö. Sveinbjörnsson, H.P. Gislason, J. Hassan Trans Tech Publications	12 国際会議録 High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure ²⁸Si¹²C, Natural and ¹³C - Enriched 4H-SiC I.G. Ivanov, M. Yazdanfar, B. Lundqvist, J.T. Chen, J. Ul Hassan Trans Tech Publications

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