Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation

Total Near Interface Trap Density Calculation of 4H-SiC/SiO₂ Structures before and after Nitrogen Passivation

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

1

開始ページ:

457

終了ページ:

460

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

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1 国際会議録 Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO₂ Interface during Nitric Oxide Passivation - A First Principles Study D.P. Ettisserry, N. Goldsman, A. Akturk, A.J. Lelis Trans Tech Publications	7 国際会議録 Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs S. Potbhare, N. Goldsman, G. Pennington, A. Lelis, J.M. McGarrity Trans Tech Publications
2 国際会議録 Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs S. Potbhare, A. Akturk, N. Goldsman, A.J. Lelis, S. Dhar Trans Tech Publications	8 国際会議録 Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge D.B. Habersat, A.J. Lelis, S. Potbhare, N. Goldsman Trans Tech Publications
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6 国際会議録 Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2 Pennington, G., Potbhare, S., Goldsman, N., Habersat, D.B., Lelis, A.J. Trans Tech Publications	12 国際会議録 Improved Observation of SiC/SiO₂ Oxide Charge Traps Using MOS C-V D.B. Habersat, A.J. Lelis Trans Tech Publications

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