Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals

Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

1

開始ページ:

411

終了ページ:

414

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

類似資料:

1 国際会議録 Structural Transformation from TSDs to Frank-Type Stacking Faults by Giant Bunched Steps in PVT-Grown 4H-SiC Single Crystals S. Sato, T. Fujimoto, H. Tsuge, M. Katsuno, M. Nakabayashi Trans Tech Publications	7 国際会議録 Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible H. Tsuge, S. Ushio, S. Sato, M. Katsuno, T. Fujimoto Trans Tech Publications
2 国際会議録 Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals M. Katsuno, T. Fujimoto, H. Yashiro, H. Tsuge, S. Sato Trans Tech Publications	8 国際会議録 Formation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4° Off-Axis 4H-SiC Substrates T. Aigo, W. Ito, H. Tsuge, H. Yashiro, M. Katsuno Trans Tech Publications
3 国際会議録 Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals H. Tsuge, S. Sato, M. Katsuno, T. Fujimoto, W. Ohashi Trans Tech Publications	9 国際会議録 A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals T. Fujimoto, H. Tsuge, M. Katsuno, S. Sato, H. Yashiro Trans Tech Publications
4 国際会議録 Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals T. Fujimoto, N. Ohtani, S. Sato, M. Katsuno, H. Tsuge Trans Tech Publications	10 国際会議録 Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules K. Ohtomo, N. Matsumoto, K. Ashida, T. Kaneko, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge, T. Fujimoto Trans Tech Publications
5 国際会議録 High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals N. Ohtani, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge Trans Tech Publications	11 国際会議録 4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots Fujimoto, T., Katsuno, M., Ohtani, N., Aigo, T., Yashiro, H. Trans Tech Publications
6 国際会議録 Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate S. Ushio, T. Fujimoto, H. Tsuge, M. Katsuno, S. Sato Trans Tech Publications	12 国際会議録 4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots Fujimoto, T., Katsuno, M., Ohtani, N., Aigo, T., Yashiro, H. Trans Tech Publications

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