Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates

Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

1

開始ページ:

407

終了ページ:

410

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

類似資料:

1 国際会議録 On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates V. Jokubavicius, B. Lundqvist, P. Hens, R. Liljedahl, R. Yakimova Trans Tech Publications	7 国際会議録 Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere P. Kwasnicki, V. Jokubavicius, J.W. Sun, H. Peyre, R. Yakimova Trans Tech Publications
2 国際会議録 Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates V. Jokubavicius, H.H. Huang, S. Schimmel, R. Liljedahl, R. Yakimova Trans Tech Publications	8 国際会議録 Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density S.U. Omar, H.Z. Song, T.S. Sudarshan, M.V.S. Chandrashekhar Trans Tech Publications
3 国際会議録 Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates V. Jokubavicius, R. Liljedahl, Y.Y. Ou, H.Y. Ou, S. Kamiyama Trans Tech Publications	9 国際会議録 Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC K. Ariyawong, V. Jokubavicius, R. Liljedahl, M. Syväjärvi Trans Tech Publications
4 国際会議録 Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy G. Zoulis, J.W. Sun, M. Beshkova, R. Vasiliauskas, S. Juillaguet Trans Tech Publications	10 国際会議録 LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates J.W. Sun, G. Zoulis, J. Lorenzzi, N. Jegenyes, S. Juillaguet Trans Tech Publications
5 国際会議録 Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC S. Juillaguet, T. Guillet, R. Bardoux, J. Camassel, T. Chassagne Trans Tech Publications	11 国際会議録 Raman,Low Temperature Photoluminescence and Transport Investigation of N-Implanted 6H-SiC Thomas,P., Contreras,S., Juillaguet,S., Robert,J.L., Camassel,J., Gimbert,J., BilIon,T., Jaussaud,C. Trans Tech Publications
6 国際会議録 Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers T. Robert, M. Marinova, S. Juillaguet, A. Henry, E.K. Polychroniadis Trans Tech Publications	12 国際会議録 Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix Camassel, J., Juillaguet, S. Trans Tech Publications

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