Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 717-720
- 発行年:
- 2012
- パート:
- 1
- 開始ページ:
- 309
- 終了ページ:
- 312
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications | |
Trans Tech Publications |
Trans Tech Publications |
10
国際会議録
On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC Substrates
Trans Tech Publications | |
Trans Tech Publications |
11
国際会議録
Photoelectrical Parameters of a PVT Grown Bulk 15R-SiC Crystal at Different Stages of Growth
Trans Tech Publications |
Trans Tech Publications |
12
国際会議録
Nondestructive Evaluation of Photoelectrical Properties of a PVT Grown Bulk 15R-SiC Crystal
Trans Tech Publications |