Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si <111> Substrates

Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si <111> Substrates

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

1

開始ページ:

185

終了ページ:

188

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

類似資料:

1 国際会議録 Low Temperature GaN Epitaxy Using Ga(mDTC)3 Precursor C. Park, D. Kim, D. Yoon, W. Jung, H. Joo, F. Umme Electrochemical Society	7 国際会議録 Temperature Effects in SiC Epitaxial Growth Oliver, J.D. Trans Tech Publications
2 国際会議録 Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy S. Sambonsuge, E. Saito, M.H. Jung, H. Fukidome, S. Filimonov Trans Tech Publications	8 国際会議録 Low-Temperature Heteroepitaxial Growth of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane A. Konno, Y. Narita, T. Itoh, K. Yasui, H. Nakzawa, T. Endoh, M. Suemitsu Electrochemical Society
3 国際会議録 Chemical Vapor Deposition Epitaxy of Silicon and Silicon-Carbon Alloys at High Rates and Low Temperatures using Neopentasilane J. C. Sturm, K. H. Chung, N. Yao, B. Sanchez, K. K. Singh, D. Carison, S. Kuppurao Electrochemical Society	9 国際会議録 Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates Saddow, S. E., Carter, G., Geil, B., Zheleva, T., Melnychuck, G., Okhuysen, M. E., Mazzola, M. S., Vispute, R. D., … Trans Tech Publications
4 国際会議録 A comparison between the calculated and experimental effects of enhanced precursor translational kinetic energy on SiC growth on Si(100) and Si(111) from … Beck, D. W., Li, Q., Kordesch, M. E. MRS-Materials Research Society	10 国際会議録 INTERFACE STRUCTURE AND DEFECTS IN CVD 3C-SiC ON (111) AND (112) TiC SUBSTRATES Chien, Fen-Ren, Nutt, S.R., Buchan, N., Carulli, Jr., J.M., Beetz, Jr., C.P., Yoo, W.S., Cummings, D. Materials Research Society
5 国際会議録 Trends in Commercially Available SiC Substrates J.D. Oliver Trans Tech Publications	11 国際会議録 LOW-TEMPERATURE HETEROEPITAXY OF β-SiC ON Si (111) SUBSTRATES Eshita, T., Suzuki, T., Hara, T., Mieho, F., Furumura, Y., Maeda, M., Sugii, T., Ito, T. Materials Research Society
6 国際会議録 Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates Emorhokpor, E., Carlson, E., Wan, J., Weber, A., Basceri, C., Jenny, J.R., Sandhu, R., Oliver, J.D., Burkeen, F., … Trans Tech Publications	12 国際会議録 3C-SiC Epitaxy on Deeply Patterned Si(111) Substrates T. Kreiliger, M. Mauceri, M. Puglisi, F. Mancarella, F. La Via Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12