Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates

Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

1

開始ページ:

137

終了ページ:

140

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

類似資料:

1 国際会議録 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer G.Y. Chung, M.J. Loboda, J. Zhang, J.W. Wan, E.P. Carlson Trans Tech Publications	7 国際会議録 Micropipe Dissociation through Thick n+ Buffer Layer Growth M.F. MacMillan, E.K. Sanchez, M. Dudley, Y. Chen, M.J. Loboda Trans Tech Publications
2 国際会議録 Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes G.Y. Chung, M.J. Loboda, S.G. Sundaresan, R. Singh Trans Tech Publications	8 国際会議録 Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition Kordina,O., Irvine,K., Sumakeris,J., Kong,H.S., Paisley,M.J., ,C.H.Carter,Jr. Trans Tech Publications
3 国際会議録 Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.J. Maminella, D.K. Schroder, T. Isaacs-Smith Trans Tech Publications	9 国際会議録 Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.F. MacMillan, J.W. Wan Trans Tech Publications
4 国際会議録 Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.J. Marinella, D.K. Schroder, P.B. Klein Trans Tech Publications	10 国際会議録 Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals Neimontas, K., Kadys, A., Aleksiejunas, R., Jarasiunas, K., Chung, G., Sanchez, E.K., Loboda, M.J. Trans Tech Publications
5 国際会議録 High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCI J. Zhang, J. Mazzola, S.G. Sunkari, G. Stewart, P.B. Klein Trans Tech Publications	11 国際会議録 Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates A. Henry, S. Leone, H. Pedersen, O. Kordina, E. Janzén Trans Tech Publications
6 国際会議録 Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor B. Thomas, D.M. Hansen, J. Zhang, M.J. Loboda, J. Uchiyama Trans Tech Publications	12 国際会議録 Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition S. Leone, H. Pedersen, A. Henry, S.P. Rao, O. Kordina Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12