Transmission-Electron-Microscopy Observations on the Growth of Epitaxial Graphene on 3C-SiC(110) and 3C-SiC(100) Virtual Substrates

Transmission-Electron-Microscopy Observations on the Growth of Epitaxial Graphene on 3C-SiC(110) and 3C-SiC(100) Virtual Substrates

著者名:

掲載資料名:

HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France

シリーズ名:

Materials science forum

シリーズ巻号:

711

発行年:

2012

開始ページ:

242

終了ページ:

245

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054202
シリーズID:	PA00000012
会議名:	Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011)
回次:	4th
会議開催地:	Tours, France
会議開催年:	2011.06.27-2011.06.30
論文注記:	4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France

類似資料:

1 国際会議録 High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon M. Suemitsu, S. Sanbonsuge, E. Saito, M.H. Jung, H. Fukidome Trans Tech Publications	7 国際会議録 Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer Nakazawa, H., Suemitsu, M. Trans Tech Publications
2 国際会議録 Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy S. Sambonsuge, E. Saito, M.H. Jung, H. Fukidome, S. Filimonov Trans Tech Publications	8 国際会議録 Epitaxial Graphene Growth Studied by Low-Energy Electron Microscopy and First-Principles H. Kageshima, H. Hibino, M. Nagase Trans Tech Publications
3 国際会議録 Low-Temperature Heteroepitaxial Growth of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane A. Konno, Y. Narita, T. Itoh, K. Yasui, H. Nakzawa, T. Endoh, M. Suemitsu Electrochemical Society	9 国際会議録 High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure S. Jiao, Y. Murakami, H. Nagasawa, H. Fukidome, I. Makabe Trans Tech Publications
4 国際会議録 Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence I. Matko, B. Chenevier, J.M. Bluet, R. Madar, F. Letertre, W. Saikaly Trans Tech Publications	10 国際会議録 Formation of High Quality SiC on Si(100) at 9000C using Monomethylsilane Gas-Source MBE Nakazawa, H., Suemitsu, M., Asami, S. Trans Tech Publications
5 国際会議録 Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane E. Saito, S. Filimonov, M. Suemitsu Trans Tech Publications	11 国際会議録 Epitaxial growth of AlN on Si substrates with intermediate 3C-SiC as buffer layers Hong, S. Q., Liaw, H. M., Linthicum, K., Davis, R. F., Fejes, P., Zollner, S., Kottke, M., Wilson, S. R. MRS-Materials Research Society
6 国際会議録 Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer Nakazawa, H., Suemitsu, M. Trans Tech Publications	12 国際会議録 Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates M. Ito, H. Fujibayashi, H. Ito, I. Kamata, M. Naito Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12