High Quality 3C-SiC Substrate for MOSFET Fabrication
- 著者名:
- 掲載資料名:
- HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 711
- 発行年:
- 2012
- 開始ページ:
- 91
- 終了ページ:
- 98
- 総ページ数:
- 8
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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10
国際会議録
INVITED: 3 C-SiC EPITAXIAL GROWTH ON LARGE-AREA Si SUBSTRATES: FABRICATION AND APPLICATIONS
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6
国際会議録
Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
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