CVD Growth of 3C-SiC on 4H-SiC Substrate

CVD Growth of 3C-SiC on 4H-SiC Substrate

著者名:

掲載資料名:

HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France

シリーズ名:

Materials science forum

シリーズ巻号:

711

発行年:

2012

開始ページ:

16

終了ページ:

21

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054202
シリーズID:	PA00000012
会議名:	Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011)
回次:	4th
会議開催地:	Tours, France
会議開催年:	2011.06.27-2011.06.30
論文注記:	4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France

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1 国際会議録 Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD S. Leone, H. Pedersen, A. Henry, O. Kordina, E. Janzén Trans Tech Publications	7 国際会議録 Surface Preparation of 4 ° Off-Axis 4H-SiC Substrate for Epitaxial Growth X. Li, J. ul Hassan, O. Kordina, E. Janzén, A. Henry Trans Tech Publications
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