3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

645

終了ページ:

648

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

類似資料:

1 国際会議録 High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility H. Uchida, A. Minami, T. Sakata, H. Nagasawa, M. Kobayashi Trans Tech Publications	7 国際会議録 Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility Okamoto, M., Tanaka, M., Yatsuo, T., Fukuda, K. Trans Tech Publications
2 国際会議録 High Channel Mobility 4H-SiC MOSFETs Sveinbjornsson, E.O., Gudjonsson, G., Allerstam, F., Olafsson, H.O., Nilsson, P.A., Zirath, H., Rodle, T., Jos, R. Trans Tech Publications	8 国際会議録 High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient Kanzaki, Y., Kinbara, H., Kosugi, H., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications
3 国際会議録 High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment Allerstam, F., Gudjonsson, G., Olafsson, H. O., Sveinbjornsson, E. O., Rodle, T., Jos, R. Trans Tech Publications	9 国際会議録 High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al- Coimplanted Surface Layer S.A. Reshanov, S. Beljakowa, T. Frank, B. Zippelius, M. Krieger Trans Tech Publications
4 国際会議録 Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminum Ion-Implanted Material Gudjonsson, G., Olafsson, H. O., Allerstam, F., Nilsson, P. A., Sveinbjornsson, E. O., Rodle, T., Jos, R. Trans Tech Publications	10 国際会議録 Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O) Gudjonsson, G., Olafsson, H.O., Sveinbjoernsson, E.O. Trans Tech Publications
5 国際会議録 Effects of N2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability Fujihira, K., Tarui, Y., Ohtsuka, K. I., Imaizumi, M., Takami, T. Trans Tech Publications	11 国際会議録 High Quality 3C-SiC Substrate for MOSFET Fabrication H. Nagasawa, T. Kawahara, K. Yagi, N. Hatta, H. Uchida Trans Tech Publications
6 国際会議録 Anomalously High Channel Mobility in SiC-MOSFETs with Al₂O₃/SiO_x/SiC Gate Structure S. Hino, T. Hatayama, J. Kato, N. Miura, T. Oomori Trans Tech Publications	12 国際会議録 High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material Sveinbjornsson, E. O., Olafsson, H. O., Gudjonsson, G., Allerstam, F., Nilsson, P. A., Syvajarvi, M., Yakimova, R., … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12