Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes

Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

551

終了ページ:

554

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

類似資料:

1 国際会議録 4H-SiC Single Photon Avalanche Diode for 280nm UV Applications J. Hu, X.B. Xin, P. Alexandrov, J.H. Zhao, B.L. VanMil Trans Tech Publications	7 国際会議録 In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD B.L. Van Mil, K.K. Lew, R.L. Myers-Ward, R.T. Holm, D.K. Gaskill, C.R. Eddy Jr Trans Tech Publications
2 国際会議録 High-performance 4H-SiC single photon avalanche diode operating at solar blind wavelength X. Xin, J. Hu, P. Alexandov, J. H. Zhao, B. L. VanMil Society of Photo-optical Instrumentation Engineers	8 国際会議録 Etching of 4° and 8° 4H-SiC Using Various Hydrogen-Propane Mixtures in a Commercial Hot-Wall CVD Reactor K.K. Lew, B.L. Van Mil, R.L. Myers-Ward, R.T. Holm, C.R. Eddy Jr., D.K. Gaskill Trans Tech Publications
3 国際会議録 Avalanche Multiplication and Breakdown in 4H-SiC Diodes Ng, B.K., David, J.P.R., Massey, D.J., Tozer, R.C., Rees, G.J., Yan, F., Zhao, J.H., Weiner, M. Trans Tech Publications	9 国際会議録 Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth R.E. Stahlbush, B.L. VanMil, K.X. Liu, K.K. Lew, R.L. Myers-Ward Trans Tech Publications
4 国際会議録 A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy R.E. Stahlbush, R.L. Myers-Ward, B.L. VanMil, D.K. Gaskill, C.R. Eddy Jr. Trans Tech Publications	10 国際会議録 Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes R.L. Myers-Ward, K.K. Lew, B.L. VanMil, R.E. Stahlbush, K.X. Liu Trans Tech Publications
5 国際会議録 High-performance SiC avalanche photodiode for single ultraviolet photon detection X. Bai, H. Liu, D. Mclntosh, J. C. Campbell Society of Photo-optical Instrumentation Engineers	11 国際会議録 Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20) D.K. Gaskill, M.A. Mastro, K.K. Lew, B.L. Van Mil, R.L. Myers-Ward, R.T. Holm, C.R. Eddy Jr Trans Tech Publications
6 国際会議録 Demonstration of the First 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodector Wu, Z., Xin, X., Yan, F., Zhao, J.H. Trans Tech Publications	12 国際会議録 Demonstration of High-Voltage 4H-SiC Bipolar RF Power Limiter Su, M., Xin, X.B., Li, LX., Zhao, J.H. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12