Shallow Traps at P-Doped SiO<sub>2</sub>/4H-SiC(0001) Interface

Shallow Traps at P-Doped SiO₂/4H-SiC(0001) Interface

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

338

終了ページ:

341

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

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1 国際会議録 Improved MOS Interface Properties of C-Face 4H-SiC by POCl₃ Annealing S. Kotake, H. Yano, D. Okamoto, T. Hatayama, T. Fuyuki Trans Tech Publications	7 国際会議録 High Temperature NO Annealing of Deposited SiO2 and SiON Films on N-Type 4H-SiC Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T. Trans Tech Publications
2 国際会議録 Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants H. Yano, Y. Oshiro, D. Okamoto, T. Hatayama, T. Fuyuki Trans Tech Publications	8 国際会議録 Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment Maeyama, Y., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T., Shirafuji, T. Trans Tech Publications
3 国際会議録 Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing D. Takeda, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki Trans Tech Publications	9 国際会議録 Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment Maeyama, Y., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T., Shirafuji, T. Trans Tech Publications
4 国際会議録 Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide D. Okamoto, H. Yano, T. Hatayama, T. Fuyuki Trans Tech Publications	10 国際会議録 Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs D. Okamoto, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki Trans Tech Publications
5 国際会議録 Effect of POCl₃ Annealing on Reliability of Thermal Oxides Grown on 4H-SiC R. Morishita, H. Yano, D. Okamoto, T. Hatayama, T. Fuyuki Trans Tech Publications	11 国際会議録 Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates Y. Ueoka, H. Yano, D. Okamoto, T. Hatayama, T. Fuyuki Trans Tech Publications
6 国際会議録 Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates D. Okamoto, H. Yano, T. Hatayama, T. Fuyuki Trans Tech Publications	12 国際会議録 Characterization of POCl₃-Annealed 4H-Sic Mosfets by Charge Pumping Technique A. Osawa, H. Yano, T. Hatayama, T. Fuyuki Trans Tech Publications

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Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface

類似資料:

Shallow Traps at P-Doped SiO₂/4H-SiC(0001) Interface