Blank Cover Image

Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing

著者名:
掲載資料名:
Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd
シリーズ名:
Materials science forum
シリーズ巻号:
679-680
発行年:
2011
開始ページ:
306
終了ページ:
309
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

H. Tsuchida, I. Kamata, M. Nagano, L. Storasta, T. Miyanagi

Trans Tech Publications

X. Zhang, M. Nagano, H. Tsuchida

Trans Tech Publications

X. Zhang, M. Nagano, H. Tsuchida

Trans Tech Publications

M. Nagano, H. Tsuchida, T. Suzuki, T. Hatakeyama, J. Senzaki

Trans Tech Publications

H. Tsuchida, I. Kamata, M. Nagano

Trans Tech Publications

X. Zhang, T. Miyazawa, H. Tsuchida

Trans Tech Publications

M. Nagano, I. Kamata, H. Tsuchida

Trans Tech Publications

M. Nagano, H. Tsuchida, T. Suzuki, T. Hatakeyama, J. Senzaki

Trans Tech Publications

M. Nagano, I. Kamata, H. Tsuchida

Trans Tech Publications

I. Kamata, M. Nagano, H. Tsuchida, Y. Chen, M. Dudley

Trans Tech Publications

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12