Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC

Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

205

終了ページ:

208

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

類似資料:

1 国際会議録 Investigation of Thermal Properties of Heavily Doped 4H-SiC Crystals by a Picosecond Transient Grating Technique P. Ščajev, A. Kadys, K. Jarašiūnas Trans Tech Publications	7 国際会議録 High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers I.D. Booker, J. Hassan, E. Janzén, J.P. Bergman Trans Tech Publications
2 国際会議録 Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes K. Jarašiūnas, P. Ščajev, T. Malinauskas, M. Kato, E. Ivakin Trans Tech Publications	8 国際会議録 Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers L. Lilja, J. ul Hassan, I.D. Booker, P. Bergman, E. Janzén Trans Tech Publications
3 国際会議録 On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures A. Kadys, P. Ščajev, G. Manolis, V. Gudelis, K. Jarašiunas Trans Tech Publications	9 国際会議録 Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique N. Dheilly, D. Planson, P. Brosselard, J. Hassan, P. Bevilacqua Trans Tech Publications
4 国際会議録 Optical Characterization of Compensating Defects in Cubic SiC P. Ščajev, K. Jarašiūnas, P.L. Abramov, S.P. Lebedev, A.A. Lebedev Trans Tech Publications	10 国際会議録 The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers L. Lilja, J. Hassan, I.D. Booker, J.P. Bergman, E. Janzén Trans Tech Publications
5 国際会議録 Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals K. Jarašiunas, P. Ščajev, V. Gudelis, P.B. Klein, M. Kato Trans Tech Publications	11 国際会議録 Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC J. Hassan, L. Lilja, I.D. Booker, J.P. Bergman, E. Janzén Trans Tech Publications
6 国際会議録 Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping J. Hassan, J.P. Bergman Trans Tech Publications	12 国際会議録 Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers L. Lilja, I. Farkas, I. Booker, J. ul Hassan, E. Janzén, J.P. Bergman Trans Tech Publications

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