Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers

Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

197

終了ページ:

200

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

類似資料:

1 国際会議録 Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers Tawara, T., Tsuchida, H., Izumi, S., Kamata, I., Izumi, K. Trans Tech Publications	7 国際会議録 Growth of 4H-SiC Epilayers and Z_1/2 Center Elimination T. Miyazawa, H. Tsuchida Trans Tech Publications
2 国際会議録 Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers H. Tsuchida, M. Ito, I. Kamata, M. Nagano, T. Miyazawa Trans Tech Publications	8 国際会議録 Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers X. Zhang, T. Miyazawa, H. Tsuchida Trans Tech Publications
3 国際会議録 Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping T. Miyazawa, T. Tawara, H. Tsuchida Trans Tech Publications	9 国際会議録 Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction H. Tsuchida, I. Kamata, M. Ito, T. Miyazawa, H. Uehigashi Trans Tech Publications
4 国際会議録 V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes T. Miyazawa, T. Tawara, H. Tsuchida Trans Tech Publications	10 国際会議録 Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques H. Tsuchida, I. Kamata, M. Ito, T. Miyazawa, N. Hoshino Trans Tech Publications
5 国際会議録 Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime K. Nakayama, A. Tanaka, K. Asano, T. Miyazawa, H. Tsuchida Trans Tech Publications	11 国際会議録 Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers N. Thierry-Jebali, C. Kawahara, T. Miyazawa, H. Tsuchida, T. Kimoto Trans Tech Publications
6 国際会議録 Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers L. Storasta, T. Miyazawa, H. Tsuchida Trans Tech Publications	12 国際会議録 Growth of Thick 4H-SiC Epilayers in a Vertical Radiant-Heating Reactor Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Materials Research Society

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