Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation
- 著者名:
- 掲載資料名:
- Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 679-680
- 発行年:
- 2011
- 開始ページ:
- 177
- 終了ページ:
- 180
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
9
国際会議録
N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors
Trans Tech Publications | |
Trans Tech Publications |
10
国際会議録
N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
6
国際会議録
Radiation Hardness of Wide-Bandgap Materials as Exemplified by SiC Nuclear Radiation Detectors
Trans Tech Publications |
Trans Tech Publications |