Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures

Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures

著者名:

掲載資料名:

Optoelectronic materials : Selected, peer reviewed papers from the 2010 International Conference on Optical, Electronic and Electrical Materials, August 1-4, Kunming, China, OEEM 2010

シリーズ名:

Materials science forum

シリーズ巻号:

663-665

発行年:

2010

パート:

1

開始ページ:

336

終了ページ:

339

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054167
シリーズID:	PA00000012
会議名:	International Conference on Optical, Electronic and Electrical Materials
回次:	2010
会議開催地:	Kunming, China
会議開催年:	2010.08.01-2010.08.04
論文注記:	2010 International Conference on Optical, Electronic and Electrical Materials, August 1-4, Kunming, China

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