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Energy Optimization of As+ Ion Implantation on SiO2 Passivation Layer of AlGaN/GaN HEMTs

著者名:
掲載資料名:
Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009
シリーズ名:
Materials science forum
シリーズ巻号:
645-648
発行年:
2010
パート:
2
開始ページ:
1223
終了ページ:
1226
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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