A Step toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 645-648
- 発行年:
- 2010
- パート:
- 2
- 開始ページ:
- 1155
- 終了ページ:
- 1158
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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3
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Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature
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Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses
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