Characterisation of Low Noise 4H-SiC Avalanche Photodiodes

Characterisation of Low Noise 4H-SiC Avalanche Photodiodes

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

2

開始ページ:

1081

終了ページ:

1084

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes W.S. Loh, J.P.R. David, S.I. Soloviev, H.Y. Cha, P.M. Sandvik Trans Tech Publications	7 国際会議録 Solar-Blind 4H-SiC Avalanche Photodiodes S.I. Soloviev, A.V. Vert, J.A. Fronheiser, P.M. Sandvik Trans Tech Publications
2 国際会議録 Design of low-noise avalanche photodiodes David,J.P.R., Tan,C.H., Plimmer,S.A., Rees,G.J., Tozer,R.C., Robson,P.N. SPIE - The International Society for Optical Engineering	8 国際会議録 Avalanche multiplication noise in bulk and thin AixGa1-xAs (x=0-0.8) PIN and NIP diodes Ng,B.K., David,J.P.R., Tan,C.H., Plimmer,S.A., Rees,G.J., Tozer,R.C., Hopkinson,M. SPIE-The International Society for Optical Engineering
3 国際会議録 Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes W.S. Loh, C.M. Johnson, J.S. Ng, P. Sandvik, S. Arthur, S. Soloviev, J.P.R. David Trans Tech Publications	9 国際会議録 Low noise InAs avalanche photodiodes for high sensitivity FPAs A. R. J. Marshall, C. H. Tan, M. J. Steer, J. P. R. David Society of Photo-optical Instrumentation Engineers
4 国際会議録 Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes W.S. Loh, J.P.R. David, B.K. Ng, S.I. Soloviev, P.M. Sandvik Trans Tech Publications	10 国際会議録 Ultralow-noise avalanche photodiodes Campbell,J.C., Wang,S., Zheng,X.G., Kinsey,G.S., Holmes Jr.,A.L., Sun,X., Sidhu,R., Yuan,P. SPIE-The International Society for Optical Engineering
5 国際会議録 Design considerations for high-speed low-noise avalanche photodiodes Ng, B.K., Ng, J.S., Hambleton, P.J., David, J.P.R., Ong, D.S., Ress, G.J., Tozer R.C. SPIE-The International Society for Optical Engineering	11 国際会議録 Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability A.V. Vert, S.I. Soloviev, J.A. Fronheiser, P.M. Sandvik Trans Tech Publications
6 国際会議録 Avalanche Multiplication and Breakdown in 4H-SiC Diodes Ng, B.K., David, J.P.R., Massey, D.J., Tozer, R.C., Rees, G.J., Yan, F., Zhao, J.H., Weiner, M. Trans Tech Publications	12 国際会議録 Performance of new fringe-detecting avalanche photodiodes at COAST George,A.V., Baldwin,J.E., Boysen,R.C., Haniff,C.A., Mackay,C.D., Pearson,D., Rogers,J., Warner,P.J., Wilson,D.M.A., … SPIE - The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12