Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO2 Stacked Gate Dielectrics

Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO₂ Stacked Gate Dielectrics

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

2

開始ページ:

991

終了ページ:

994

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Reduction of Charge Trapping Sites in Al₂O₃/SiO₂ Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC … T. Hosoi, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano Trans Tech Publications	7 国際会議録 Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO2/SiC Interfaces H. Watanabe, Y. Watanabe, M. Harada, Y. Kagei, T. Kirino Trans Tech Publications
2 国際会議録 AION/SiO₂ Stacked Gate Dielectrics for 4H-SiC MIS Devices T. Hosoi, M. Harada, Y. Kagei, Y. Watanabe, T. Shimura Trans Tech Publications	8 国際会議録 Impact of Interface Defect Passivation on Conduction Band Offset at SiO₂/4H-SiC Interface T. Hosoi, T. Kirino, A. Chanthaphan, Y. Uenishi, D. Ikeguchi Trans Tech Publications
3 国際会議録 Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy K. Kozono, T. Hosoi, Y. Kagei, T. Kirino, S. Mitani Trans Tech Publications	9 国際会議録 Improvement of SiO₂/4H-SiC Interface Quality by Post-Oxidation Annealing in N₂ at High-Temperatures A. Chanthaphan, Y.H. Cheng, T. Hosoi, T. Shimura, H. Watanabe Trans Tech Publications
4 国際会議録 Energy Band Structure of SiO₂/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer H. Watanabe, T. Kirino, Y. Kagei, J. Harries, A. Yoshigoe Trans Tech Publications	10 国際会議録 Structure and Surface Morphology of Thermal SiO₂ Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium A. Chanthaphan, Y. Katsu, T. Hosoi, T. Shimura, H. Watanabe Trans Tech Publications
5 国際会議録 Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces Y. Kagei, T. Kirino, Y. Watanabe, S. Mitani, Y. Nakano Trans Tech Publications	11 国際会議録 Investigation of Surface and Interface Morphology of Thermally Grown SiO₂ Dielectrics on 4H-SiC(0001) Substrates T. Hosoi, K. Konzono, Y. Uenishi, S. Mitani, Y. Nakano Trans Tech Publications
6 国際会議録 Flatband Voltage Shift Depending on SiO2/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO₂ Stacked Gate Dielectrics T. Hosoi, S. Azumo, K. Yamamoto, M. Aketa, Y. Kashiwagi Trans Tech Publications	12 国際会議録 Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and (000-1) C-Face Substrates H. Watanabe, T. Hosoi, T. Kirino, Y. Uenishi, A. Chanthaphan Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12