4.6 kV, 10.5 mOhm&×cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers

4.6 kV, 10.5 mOhm&×cm² Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

2

開始ページ:

897

終了ページ:

900

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

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2 国際会議録 Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon K. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, C.M. Johnson Trans Tech Publications	8 国際会議録 Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G. Trans Tech Publications
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