Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials

Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

2

開始ページ:

753

終了ページ:

758

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski Trans Tech Publications	7 国際会議録 Trends in Dopant Incorporation for 3C-SiC Films on Silicon M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras, J. Camassel Trans Tech Publications
2 国際会議録 Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers Mank, H., Moisson, C., Turover, D., Twigg, M., Saddow, S. E. Trans Tech Publications	8 国際会議録 Strain in 3C-SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates M. Zielinski, M. Portail, T. Chassagne, Y. Cordier Trans Tech Publications
3 国際会議録 Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre Trans Tech Publications	9 国際会議録 Silicon-Containing Crystalline Carbon Nitride: A Novel Wide Band Gap Material Chen, K.H., Bhusari, D.M., Wu, J.J. Electrochemical Society
4 国際会議録 DOPED AMORPHOUS AND MICROCRYSTALLINE SILICON CARBIDE AS WIDE BAND-GAP MATERIAL Demichelis, F., Pirri, C.F., Tresso, E., Rava, P. Materials Research Society	10 国際会議録 *MECHANISMS OF EXCIMER LASER ABLATION OF WIDE BAND-GAP MATERIALS: THE ROLE OF DEFECTS IN SINGLE CRYSTAL MgO Dickinson, J.T., Jensen, L.C., Webb, R.L., Dawes, M.L., Langford, S.C. Materials Research Society
5 国際会議録 Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances Hobgood, H.McD., Brady, M.F., Calus, M.R., Jenny, J.R., Leonard, R.T., Malta, D.P., Muller, S.G., Powell, A.R., … Trans Tech Publications	11 国際会議録 Photonic Band Gap Materials Biswas R., Chan T. C., Sigalas M., Soukoulis M. C., Ho M. K. Kluwer Academic Publishers
6 国際会議録 Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne Trans Tech Publications	12 国際会議録 Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon M. Zielinski, J.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin Trans Tech Publications

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