Electrical Properties and Gas Sensing Characteristics of the Al2O3/4H SiC Interface Studied by Impedance Spectroscopy

Electrical Properties and Gas Sensing Characteristics of the Al₂O₃/4H SiC Interface Studied by Impedance Spectroscopy

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

531

終了ページ:

534

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Characterization of the SiO₂/SiC Interface with Impedance Spectroscopy P.A. Sobas, U. Grossner, B.G. Svensson Trans Tech Publications	7 国際会議録 Evidence of Tunneling in n-4H-SiC/SiO₂ Capacitors at Low Temperatures L.D. Filip, I. Pintilie, B.G. Svensson Trans Tech Publications
2 国際会議録 The Al2O3/4H-SiC Interface Investigated by Thermal Dielectric Relaxation Current Technique M. Avice, U. Grossner, O. Nilsen, H. Fjellvag, B.G. Svensson Trans Tech Publications	8 国際会議録 Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique L.S. Lovlie, I. Pintilie, S. Kumar C-P., U. Grossner, B.G. Svensson Trans Tech Publications
3 国際会議録 X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC U. Grossner, M. Servidori, M. Avice, O. Nilsen, H. Fjellvag, R. Nipoti, B.G. Svensson Trans Tech Publications	9 国際会議録 Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy N. Iwamoto, A. Azarov, T. Ohshima, A.M.M. Moe, B.G. Svensson Trans Tech Publications
4 国際会議録 High Temperature Annealing Study of Al2O3 Deposited by ALCVD on n-Type 4H-SiC Avice, M., Grossner, U., Nilsen, O., Christensen, J.S., Fjellvag, H., Svensson, B.G. Trans Tech Publications	10 国際会議録 Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy Leveque, P., Martin, D., Svensson, B.G., Hallen, A. Trans Tech Publications
5 国際会議録 Electrical Properties of Aluminum Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC Avice, M., Grossner, U., Monakhov, E. V., Grillenberger, J., Nilsen, O., Fjellvag, H., Svensson, B. G. Trans Tech Publications	11 国際会議録 Electrically Active Defects in n-Type 4H- and 6H-SiC Doyle,J.P., Aboelfotoh,M.O., Svensson,B.G. Trans Tech Publications
6 国際会議録 XPS Study of the Electronic Properties of the Ce/4H-SiC Interface, and the Formation of the SiO2/Ce2Si2O7/4H-SiC Interface Structure upon Oxidation M. Kildemo, U. Grossner, B.G. Svensson, S. Raaen Trans Tech Publications	12 国際会議録 ELECTRICAL PROPERTIES OF COPPER SILICIDE/SILICON INTERFACES Svensson, B. G. MRS - Materials Research Society

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