Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation

Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

469

終了ページ:

472

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices M.J. Tadjer, K.D. Hobart, E.A. Imhoff, F.J. Kub Trans Tech Publications	7 国際会議録 Characterization of Light Emissione from 4H and 6H SiC MOSFETs Macfarlane, P.J., Stahlbush, R.E. Materials Research Society
2 国際会議録 Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing M.J. Tadjer, N.A. Mahadik, B.N. Feigelson, R.E. Stahlbush, E.A. Imhoff Trans Tech Publications	8 国際会議録 Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures Liu, K.X., Stahlbush, R.E., Hobart, K.D., Sumakeris, J.J. Trans Tech Publications
3 国際会議録 Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers N.A. Mahadik, R.E. Stahlbush, A. Nath, M.J. Tadjer, E.A. Imhoff Trans Tech Publications	9 国際会議録 Hydrogen in Buried SiO2 Layers Revesz, A.G., Stahlbush, R.E., Hughes, H.L. Electrochemical Society
4 国際会議録 Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, K.D. Hobart Trans Tech Publications	10 国際会議録 Analysis of structural and electrical characteristics of low dose SIMOX Anc, M.J., Allen, L.P., McMarr, P.J., Mrstik, B.J., Hughes, H.L., Brothers, C.P. Electrochemical Society
5 国際会議録 Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes J.D. Caldwell, R.E. Stahlbush, O.J. Glembocki, K.D. Hobart, K.X. Liu Trans Tech Publications	11 国際会議録 Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC Matsuura, H., Sugiyama, K., Nishikawa, K., Nagata, T., Fukunaga, N. Trans Tech Publications
6 国際会議録 Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays Yoshikawa,M., Saitoh,K., Ohshima,T., Itoh,H., Nashiyama,I., Takahashi,Y., Ohnishi,K., Okumura,H., Yoshida,S. Trans Tech Publications	12 国際会議録 Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS Diodes Joshua David Caldwell, Robert E. Stahlbush, Eugene A. Imhoff, Orest J. Glembocki, Karl D. Hobart, Marko J. Tadjer, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12