Detection and Electrical Characterization of Defects at the SiO<sub>2</sub>/4H-SiC Interface

Detection and Electrical Characterization of Defects at the SiO₂/4H-SiC Interface

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

463

終了ページ:

468

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 SiC/SiO2 interface defects Afanas'ev, V. V. Kluwer Academic Publishers	7 国際会議録 Traps at the Interface of 3C-SiC/SiO2-MOS-Structures Ciobanu, F., Pensl, G., Nagasawa, H., Schoner, A., Dimitrijev, S., Cheong, K.-Y., Afanas'ev, V.V., Wagner, G. Trans Tech Publications
2 国際会議録 Electron spin resonance features of the Pb1 interface defect in thermal(100)Si/SiO2 Stesmans,A., Afanas'ev,V.V. Trans Tech Publications	8 国際会議録 Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs Y. Nanen, B. Zippelius, S. Beljakowa, L. Trapaidze, M. Krieger Trans Tech Publications
3 国際会議録 Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility Bassler, M., Afanas'ev, V. V., Pensl, G., Schulz, M. Trans Tech Publications	9 国際会議録 Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers S. Beljakowa, S.A. Reshanov, B. Zippelius, M. Krieger, G. Pensl Trans Tech Publications
4 国際会議録 Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface Afanas'ev,V.V., Stesmans,A., Harris,C.I. Trans Tech Publications	10 国際会議録 SiC/SiO2 Interface States: Properties and Models Afanas'ev, V. V., Ciobanu, F., Dimitrijev, S., Pensl, G., Stesmans, A. Trans Tech Publications
5 国際会議録 Interface State Density at Implanted 6H SiC/SiO2 MOS Structures Bassler,M., Afanas'ev,V.V., Pensl,G. Trans Tech Publications	11 国際会議録 Properties of Ultrathin High-k Dielectrics on Si Probed by Electron Spin Resonance-Active Defects: Interfaces and Interlayers Stesmans, A., Afanas'ev, V.V. Electrochemical Society
6 国際会議録 Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC J. Weber, S. Beljakowa, H.B. Weber, G. Pensl, B. Zippelius Trans Tech Publications	12 国際会議録 High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al- Coimplanted Surface Layer S.A. Reshanov, S. Beljakowa, T. Frank, B. Zippelius, M. Krieger Trans Tech Publications

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Detection and Electrical Characterization of Defects at the SiO2/4H-SiC Interface

類似資料:

Detection and Electrical Characterization of Defects at the SiO₂/4H-SiC Interface