4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

99

終了ページ:

102

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate K. Kojima, K. Masumoto, S. Ito, A. Nagata, H. Okumura Trans Tech Publications	7 国際会議録 Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth K. Kojima, H. Okumura, K. Arai Trans Tech Publications
2 国際会議録 Improvement of Homoepitaxial Layer Quality Grown on 4H-SiC Si-Face Substrate Lower than 1 Degree Off Angle K. Kojima, S. Ito, A. Nagata, H. Okumura Trans Tech Publications	8 国際会議録 Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth K. Kojima, S. Kuroda, H. Okumura, K. Arai Trans Tech Publications
3 国際会議録 The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle K. Masumoto, K. Kojima, H. Okumura Trans Tech Publications	9 国際会議録 High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1o) Off-Angle Fukuda, K., Kato, M., Harada, S., Kojima, K. Trans Tech Publications
4 国際会議録 Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle S. Harada, S. Ito, M. Kato, A. Takatsuka, K. Kojima Trans Tech Publications	10 国際会議録 Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates Masahara, K., Kushibe, M., Ohno, H., Kojima, K., Takahashi, T., Ishida, Y., Suzuki, T., Tanaka, T., Yoshida, S., Arai, … Trans Tech Publications
5 国際会議録 Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle K. Masumoto, S. Ito, H. Goto, H. Yamaguchi, K. Tamura Trans Tech Publications	11 国際会議録 Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces Nakamura, S.I., Kimoto, T., Matsunami, H. Trans Tech Publications
6 国際会議録 2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method Kojima, K., Okumura, H., Kuroda, S., Arai, K., Ohi, A., Akinaga, H. Trans Tech Publications	12 国際会議録 Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces K. Ariyoshi, S. Harada, J. Senzaki, T. Kojima, Y. Kobayashi Trans Tech Publications

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