Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability

Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

833

終了ページ:

836

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

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1 国際会議録 1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance H.S. Lee, M. Domeij, C.M. Zetterling, R. Ghandi, M. Östling Trans Tech Publications	7 国際会議録 Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE B. Buono, H.S. Lee, M. Domeij, C.M. Zetterling, M. Östling Trans Tech Publications
2 国際会議録 4H-SiC Power BJTs with High Current Gain and Low On-Resistance H.S. Lee, M. Domeij, C.M. Zetterling, M. Ostling Trans Tech Publications	8 国際会議録 Current Gain Dependence on Emitter Width in 4H-SiC BJTs Domeij, M., Lee, H.S., Zetterling, C.M., Ostling, M., Schoner, A. Trans Tech Publications
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