Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs

Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

805

終了ページ:

808

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter S. Potbhare, N. Goldsman, A. Akturk, A.J. Lelis Trans Tech Publications	7 国際会議録 Investigation of Drain Current Saturation in 4H-SiC MOSFETs G. Pennington, S. Potbhare, N. Goldsman, D. Habersat, A. Lelis, J.M. McGarrity, C. Ashman Trans Tech Publications
2 国際会議録 Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs S. Potbhare, A. Akturk, N. Goldsman, A.J. Lelis, S. Dhar Trans Tech Publications	8 国際会議録 Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2 Pennington, G., Potbhare, S., Goldsman, N., Habersat, D.B., Lelis, A.J. Trans Tech Publications
3 国際会議録 Total Near Interface Trap Density Calculation of 4H-SiC/SiO₂ Structures before and after Nitrogen Passivation S. Salemi, A. Akturk, S. Potbhare, A.J. Lelis, N. Goldsman Trans Tech Publications	9 国際会議録 Effect of SiC Power DMOSFET Threshold-Voltage Instability A.J. Lelis, D. Habersat, R. Green, A. Ogunniyi, M. Gurfinkel, J. Suehle, N. Goldsman Materials Research Society
4 国際会議録 Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics A.J. Lelis, R. Green, D.B. Habersat, N. Goldsman Trans Tech Publications	10 国際会議録 Implications of Threshold-Voltage Instability on SiC DMOSFET Operation A.J. Lelis, D.B. Habersat, R. Green, N. Goldsman Trans Tech Publications
5 国際会議録 Silicon Carbide-Silicon Dioxide Transition Layer Mobility S. Salemi, A. Akturk, S. Potbhare, A.J. Lelis, N. Goldsman Trans Tech Publications	11 国際会議録 Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge D.B. Habersat, A.J. Lelis, S. Potbhare, N. Goldsman Trans Tech Publications
6 国際会議録 Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO₂ Interface during Nitric Oxide Passivation - A First Principles Study D.P. Ettisserry, N. Goldsman, A. Akturk, A.J. Lelis Trans Tech Publications	12 国際会議録 Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs S. Potbhare, N. Goldsman, G. Pennington, A. Lelis, J.M. McGarrity Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12