High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al- Coimplanted Surface Layer

High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al- Coimplanted Surface Layer

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

765

終了ページ:

768

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

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1 国際会議録 Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs Y. Nanen, B. Zippelius, S. Beljakowa, L. Trapaidze, M. Krieger Trans Tech Publications	7 国際会議録 Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays S. Hishiki, S.A. Reshanov, T. Ohshima, H. Itoh, G. Pensl Trans Tech Publications
2 国際会議録 Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length B. Zippelius, M. Hauck, S. Beljakowa, H.B. Weber, M. Krieger Trans Tech Publications	8 国際会議録 High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface T. Masuda, S. Harada, T. Tsuno, Y. Namikawa, T. Kimoto Trans Tech Publications
3 国際会議録 Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers S. Beljakowa, S.A. Reshanov, B. Zippelius, M. Krieger, G. Pensl Trans Tech Publications	9 国際会議録 Lifetime Investigations of 4H-SiC PiN Power Diodes S.A. Reshanov, W. Bartsch, B. Zippelius, G. Pensl Trans Tech Publications
4 国際会議録 Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons S.A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno Trans Tech Publications	10 国際会議録 High Channel Mobility 4H-SiC MOSFETs Sveinbjornsson, E.O., Gudjonsson, G., Allerstam, F., Olafsson, H.O., Nilsson, P.A., Zirath, H., Rodle, T., Jos, R. Trans Tech Publications
5 国際会議録 High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N₂O Atmosphere A.I. Mikhaylov, S.A. Reshanov, A. Schöner, A.V. Afanasyev, V.V. Luchinin Trans Tech Publications	11 国際会議録 High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces M. Noborio, J. Suda, T. Kimoto Trans Tech Publications
6 国際会議録 Detection and Electrical Characterization of Defects at the SiO₂/4H-SiC Interface M. Krieger, S. Beljakowa, B. Zippelius, V.V. Afanas'ev, A.J. Bauer Trans Tech Publications	12 国際会議録 Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy S. Beljakowa, M. Krieger, T. Frank, G. Pensl, L. Trapaidze Trans Tech Publications

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