Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET

Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

761

終了ページ:

764

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Passivation by N Implantation of the SiO₂/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability A. Poggi, F. Moscatelli, S. Solmi, R. Nipoti Materials Research Society	7 国際会議録 Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation Y. Hijikata, S. Yoshida, F. Moscatelli, A. Poggi, S. Solmi, S. Cristiani, R. Nipoti Trans Tech Publications
2 国際会議録 Analysis of the Electron Traps at the 4H-SiC/SiO₂ Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer I. Pintilie, F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi Trans Tech Publications	8 国際会議録 Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation F. Moscatelli, R. Nipoti, S. Solmi, S. Cristiani, M. Sanmartin Trans Tech Publications
3 国際会議録 Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose A. Poggi, F. Moscatelli, Y. Hijikata, S. Solmi, M. Sanmartin, F. Tamarri, R. Nipoti Trans Tech Publications	9 国際会議録 The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO₂ Interface I. Pintilie, F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi Trans Tech Publications
4 国際会議録 Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi, S. Cristiani Trans Tech Publications	10 国際会議録 Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+n 4H-SiC Diodes F. Moscatelli, F. Bergamini, A. Poggi, M. Passini, F. Tamarri Trans Tech Publications
5 国際会議録 Nitridation of the SiO₂/SiC Interface by N⁺ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs F. Moscatelli, A. Poggi, S. Solmi, R. Nipoti, A. Armigliato Trans Tech Publications	11 国際会議録 Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers R. Nipoti, A. Nath, Y.L. Tian, F. Tamarri, F. Moscatelli Trans Tech Publications
6 国際会議録 Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO₂ Capacitors at Low Temperature Caused by near Interface States I. Pintilie, F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi Trans Tech Publications	12 国際会議録 Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation Poggi, A., Nipoti, R., Solmi, S., Bersani, M., Vanzetti, L. Trans Tech Publications

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