4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 615-617
- 発行年:
- 2009
- 開始ページ:
- 647
- 終了ページ:
- 650
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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1
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Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations
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Annealing effects of schottky contacts on the characteristics of 4H-SiC schottky barrier diodes
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Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes
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