Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC

Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

553

終了ページ:

556

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC T. Hatakeyama, T. Suzuki, K. Ichinoseki, H. Matsuhata, K. Fukuda Trans Tech Publications	7 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications
2 国際会議録 Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation T. Suzuki, J. Senzaki, T. Hatakeyama, K. Fukuda, T. Shinohe Trans Tech Publications	8 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications
3 国際会議録 Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC T. Hatakeyama, T. Suzuki, J. Senzaki, K. Fukuda, H. Matsuhata Trans Tech Publications	9 国際会議録 High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing Fukuda, K., Senzaki, J., Kojima, K., Suzuki, T. Trans Tech Publications
4 国際会議録 Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1) T. Suzuki, J. Senzaki, T. Hatakeyama, K. Fukuda, T. Shinohe Trans Tech Publications	10 国際会議録 Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face T. Suzuki, H. Yamaguchi, T. Hatakeyama, H. Matsuhata, J. Senzaki Trans Tech Publications
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6 国際会議録 Gate-Area Dependence of SiC Thermal Oxides Reliability J. Senzaki, A. Shimozato, M. Okamoto, K. Kojima, K. Fukuda Trans Tech Publications	12 国際会議録 A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing Fukuda, K., Senzaki, J., Kushibe, M., Kojima, K., Kosugi, R., Suzuki, S., Harada, S., Suzuki, T., Tanaka, T., Arai, K. Trans Tech Publications

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