AION/SiO<sub>2</sub> Stacked Gate Dielectrics for 4H-SiC MIS Devices

AION/SiO₂ Stacked Gate Dielectrics for 4H-SiC MIS Devices

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

541

終了ページ:

544

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Reduction of Charge Trapping Sites in Al₂O₃/SiO₂ Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC … T. Hosoi, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano Trans Tech Publications	7 国際会議録 Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties T. Hosoi, D. Nagai, M. Sometani, T. Shimura, M. Takei, H. Watanabe Trans Tech Publications
2 国際会議録 Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO₂ Stacked Gate Dielectrics T. Hosoi, Y. Kagei, T. Kirino, Y. Watanabe, K. Kozono Trans Tech Publications	8 国際会議録 Energy Band Structure of SiO₂/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer H. Watanabe, T. Kirino, Y. Kagei, J. Harries, A. Yoshigoe Trans Tech Publications
3 国際会議録 Improvement of SiO₂/4H-SiC Interface Quality by Post-Oxidation Annealing in N₂ at High-Temperatures A. Chanthaphan, Y.H. Cheng, T. Hosoi, T. Shimura, H. Watanabe Trans Tech Publications	9 国際会議録 Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-κ Gate Stacks H. Watanabe, S. Yoshida, Y. Kita, T. Hosoi, T. Shimura Electrochemical Society
4 国際会議録 Structure and Surface Morphology of Thermal SiO₂ Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium A. Chanthaphan, Y. Katsu, T. Hosoi, T. Shimura, H. Watanabe Trans Tech Publications	10 国際会議録 Dielectric Properties of Thermally Grown SiO₂ on 4H-SiC(0001) Substrates T. Hosoi, Y. Uenishi, S. Mitani, Y. Nakano, T. Nakamura Trans Tech Publications
5 国際会議録 Flatband Voltage Shift Depending on SiO2/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO₂ Stacked Gate Dielectrics T. Hosoi, S. Azumo, K. Yamamoto, M. Aketa, Y. Kashiwagi Trans Tech Publications	11 国際会議録 Investigation of Surface and Interface Morphology of Thermally Grown SiO₂ Dielectrics on 4H-SiC(0001) Substrates T. Hosoi, K. Konzono, Y. Uenishi, S. Mitani, Y. Nakano Trans Tech Publications
6 国際会議録 Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO2/SiC Interfaces H. Watanabe, Y. Watanabe, M. Harada, Y. Kagei, T. Kirino Trans Tech Publications	12 国際会議録 Degradation of SiO₂/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura Trans Tech Publications

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AION/SiO2 Stacked Gate Dielectrics for 4H-SiC MIS Devices

類似資料:

AION/SiO₂ Stacked Gate Dielectrics for 4H-SiC MIS Devices