Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC

Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

537

終了ページ:

540

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

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2 国際会議録 A Study of Deep Energy-Level Traps at the 4H-SiC/SiO₂ Interface and Their Passivation by Hydrogen F. Allerstam, E.Ö. Sveinbjörnsson Trans Tech Publications	8 国際会議録 Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminum Ion-Implanted Material Gudjonsson, G., Olafsson, H. O., Allerstam, F., Nilsson, P. A., Sveinbjornsson, E. O., Rodle, T., Jos, R. Trans Tech Publications
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