Si<sub>c</sub>C<sub>si</sub>Antisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC

Si_cC_siAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

357

終了ページ:

360

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 The Electron Irradiation Induced Defect E1,E2 in GaAs:Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model Bardeleben,H.J.von, Delerue,C., Stievenard,D. Trans Tech Publications	7 国際会議録 Calculation of Hyperfine Constants of Defects in 4H-SiC Gali, A., Deak, P., Son, N.T., Janzen, E., von Bardeleben, H.J., Monge, J.-L. Trans Tech Publications
2 国際会議録 EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V von Bardeleben, H.J., Cantin, J.L., Reshanov, S.A., Rastegaev, V.P. Trans Tech Publications	8 国際会議録 New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC U. Gerstmann, S. Greulich-Weber, E. Rauls, J.M. Spaeth, E.N. Kalabukhova, E.N. Mokhov, F. Mauri Trans Tech Publications
3 国際会議録 Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in … Gali, A., Deak, P., Rauls, E., Ordejon, P., Carlsson, F.H.C., Ivanov, I.G., Son, N.T., Janzen, E., Choyke, W.J. Trans Tech Publications	9 国際会議録 The EL2 Defect and the Isolated Arsenic Antisite Defect in GaAs Bardeleben,H.J.von, Bourgoin,J.C., Stievenard,D. Trans Tech Publications
4 国際会議録 Proton Irradiation Induced Defects in 4H-SiC Storasta, L., Carlsson, F.H.C., Sridhara, S.G., Aberg, D., Bergman, J.P., Hallen, A., Janzen, E. Trans Tech Publications	10 国際会議録 Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold von Bardeleben, H.J., Cantin, J.L., Baranov, P.G., Mokhov, E.N. Trans Tech Publications
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6 国際会議録 Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC M.E. Zvanut, G. Ngetich, H.J. Chung, A.Y. Polyakov, M. Skowronski Trans Tech Publications	12 国際会議録 Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC von Bardeleben, H.J., Cantin, J.L., Shishkin, Y., Devaty, R.P., Choyke, W.J. Trans Tech Publications

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SicCsiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC

類似資料:

Si_cC_siAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC