Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

311

終了ページ:

314

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes W.S. Loh, C.M. Johnson, J.S. Ng, P. Sandvik, S. Arthur, S. Soloviev, J.P.R. David Trans Tech Publications	7 国際会議録 Impact Ionization in Ion Implanted 4H-SiC Photodiodes Wei Sun Loh, Eric Z. J. Goh, Konstantin Vassilevski, Irina Nikitina, John P. R. David, Nick G. Wright, C. Mark Johnson Materials Research Society
2 国際会議録 Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes W.S. Loh, J.P.R. David, S.I. Soloviev, H.Y. Cha, P.M. Sandvik Trans Tech Publications	8 国際会議録 Observation of Luminescence from Defects in 4H-SiC APDs Operating in Avalanche Breakdown S.I. Soloviev, P.M. Sandvik, A. Vertiatchikh, K. Dovidenko, H.Y. Cha Trans Tech Publications
3 国際会議録 Characterisation of Low Noise 4H-SiC Avalanche Photodiodes J.E. Green, W.S. Loh, J.P.R. David, R.C. Tozer, S.I. Soloviev Trans Tech Publications	9 国際会議録 Performance of Silicon Carbide Avalanche Photodiode Arrays and Photomultipliers A.V. Vert, S.I. Soloviev, P.M. Sandvik Trans Tech Publications
4 国際会議録 Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes S.I. Soloviev, A.V. Vert, J.A. Fronheiser, P.M. Sandvik Trans Tech Publications	10 国際会議録 Temperature Dependence of Impact Ionization Coefficients in 4H-SiC H. Niwa, J. Suda, T. Kimoto Trans Tech Publications
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6 国際会議録 Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability A.V. Vert, S.I. Soloviev, J.A. Fronheiser, P.M. Sandvik Trans Tech Publications	12 国際会議録 Study of Dark Currents in 4H-SiC UV APDs with Separate Absorption and Multiplication Regions S. Soloviev, H.Y. Cha, J. Grande, P. Sandvik Trans Tech Publications

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