Structural Properties of 3C-SiC Grown by Sublimation Epitaxy

Structural Properties of 3C-SiC Grown by Sublimation Epitaxy

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

181

終了ページ:

184

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates M. Beshkova, J. Lorenzzi, N. Jegenyes, J. Birch, M. Syväjärvi Trans Tech Publications	7 国際会議録 Progress in 3C-SiC Growth and Novel Applications R. Yakimova, R. Vasiliauskas, J. Eriksson, M. Syväjärvi Trans Tech Publications
2 国際会議録 Properties of AlN Layers Grown by Sublimation Epitaxy Beshkova, M., Zakhariev, Z., Birch, J., Kakanakova, A., Yakimova, R. Trans Tech Publications	8 国際会議録 Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds R. Vasiliauskas, M. Marinova, M. Syväjärvi, A. Mantzari, A. Andreadou Trans Tech Publications
3 国際会議録 The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy M. Marinova, A. Mantzari, M. Beshkova, M. Syväjärvi, R. Yakimova Trans Tech Publications	9 国際会議録 Two-Dimensional Nucleation of Cubic and 6H Silicon Carbide R. Vasiliauskas, M. Syväjärvi, M. Beshkova, R. Yakimova Trans Tech Publications
4 国際会議録 Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy G. Zoulis, J.W. Sun, M. Beshkova, R. Vasiliauskas, S. Juillaguet Trans Tech Publications	10 国際会議録 High Growth Rate of α-SiC by Sublimation Epitaxy Syvajarvi,M., Yakimova,R., MacMillan,M.F., Tuominen,M., Kakanakova-Georgieva,A., Hemmingsson,C.G., Ivanov,I.G., … Trans Tech Publications
5 国際会議録 Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers G. Manolis, M. Beshkova, M. Syväjärvi, R. Yakimova, K. Jarašiūnas Trans Tech Publications	11 国際会議録 Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy G. Zoulis, J. Sun, R. Vasiliauskas, J. Lorenzzi, H. Peyre Trans Tech Publications
6 国際会議録 Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC M. Syvajarvi, N. Sritirawisarn, R. Yakimova Trans Tech Publications	12 国際会議録 Process Induced Extended Defects in SiC Grown via Sublimation Yakimova, R., Syvajarvi, M., Jacobson, H., Ciechonski, R.R., Vouroutzis, N., Stoemenos, J. Materials Research Society

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