Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon

Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

169

終了ページ:

172

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski Trans Tech Publications	7 国際会議録 Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne Trans Tech Publications
2 国際会議録 Strain in 3C-SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates M. Zielinski, M. Portail, T. Chassagne, Y. Cordier Trans Tech Publications	8 国際会議録 Trends in Dopant Incorporation for 3C-SiC Films on Silicon M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras, J. Camassel Trans Tech Publications
3 国際会議録 Structural and Morphological Characterization of 3C-SiC Films Grown on (111), (211) and (100) Silicon Substrates M. Portail, M. Nemoz, M. Zielinski, T. Chassagne Trans Tech Publications	9 国際会議録 Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre Trans Tech Publications
4 国際会議録 Observation of Asymmetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates Marcin Zielinski, Marc Portail, Thierry Chassagne, Slawomir Kret, Maud Nemoz, Yvon Cordier Materials Research Society	10 国際会議録 Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates A.E. Bazin, T. Chassagne, J.F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard, D. Alquier Trans Tech Publications
5 国際会議録 Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon M. Zielinski, J.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin Trans Tech Publications	11 国際会議録 Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon Trans Tech Publications
6 国際会議録 p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail Trans Tech Publications	12 国際会議録 Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12