On-Axis Homoepitaxy on Full 2″ 4H-SiC Wafer for High Power Applications

On-Axis Homoepitaxy on Full 2″ 4H-SiC Wafer for High Power Applications

著者名:

掲載資料名:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

シリーズ名:

Materials science forum

シリーズ巻号:

615-617

発行年:

2009

開始ページ:

133

終了ページ:

136

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054140
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	7th
会議開催地:	Barcelona, Spain
会議開催年:	2008.09.07-2008.09.11
論文注記:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

類似資料:

1 国際会議録 High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC J. Hassan, J.P. Bergman, A. Henry, E. Janzén Trans Tech Publications	7 国際会議録 3.3 kV-10A 4H-SiC PiN Diodes P. Brosselard, N. Camara, J. Hassan, X. Jordá, J.P. Bergman Trans Tech Publications
2 国際会議録 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate J. Hassan, J.P. Bergman, A. Henry, H. Pedersen, P.J. McNally, E. Janzen Trans Tech Publications	8 国際会議録 Growth and Properties of SiC On-Axis Homoepitaxial Layers J. Hassan, J.P. Bergman, J. Palisaitis, A. Henry, P.J. McNally Trans Tech Publications
3 国際会議録 Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC M. Florentin, J. Montserrat, P. Brosselard, A. Henry, P. Godignon Trans Tech Publications	9 国際会議録 Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers H. Pedersen, A. Henry, J. Hassan, J.P. Bergman, E. Janzen Trans Tech Publications
4 国際会議録 Thick Epilayer for Power Devices A. Henry, J. Hassan, H. Pedersen, F. Beyer, J.P. Bergman, S. Andersson, E. Janzen, P. Godignon Trans Tech Publications	10 国際会議録 Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates ul Hassan, J., Hallin, C., Bergman, J.P., Janzen, E. Trans Tech Publications
5 国際会議録 Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers J. Hassan, A. Henry, J.P. Bergman Trans Tech Publications	11 国際会議録 Investigations of Possible Nitrogen Participation in the Z1/Z2 Defect in 4H-SiC Storasta, L., Henry, A., Bergman, J.P., Janzen, E. Trans Tech Publications
6 国際会議録 Improved SiC Epitaxial Material for Bipolar Applications Peder Bergman, Jawad ul Hassan, Alex Ellison, Anne Henry, Philippe Godignon, Pierre Brosselard, Erik Janzén Materials Research Society	12 国際会議録 Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers J. Hassan, J.P. Bergman Trans Tech Publications

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