The Behavior of Oxygen and Defects in Si-Based Semiconductor Studied by Positron Annihilation Techniques

The Behavior of Oxygen and Defects in Si-Based Semiconductor Studied by Positron Annihilation Techniques

著者名:

掲載資料名:

Positron and positronium chemistry : proceedings of the 9th International Workshop on Positron and Positronium Chemistry, May 11-15, 2008, Wuhan University, China

シリーズ名:

Materials science forum

シリーズ巻号:

607

発行年:

2009

開始ページ:

131

終了ページ:

133

総ページ数:

3

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054135
シリーズID:	PA00000012
会議名:	International Workshop on Positron and Positronium Chemistry
回次:	9th
会議開催地:	Wuhan University, China
会議開催年:	2008.05.11-2008.05.15
論文注記:	9th International Workshop on Positron and Positronium Chemistry, May 11-15, 2008, Wuhan University, China

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