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Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs

著者名:
掲載資料名:
Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
シリーズ名:
Materials science forum
シリーズ巻号:
600-603
発行年:
2009
パート:
2
開始ページ:
1345
終了ページ:
1348
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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