Material Properties of GaN Films Grown on SiC/SOI Substrate

Material Properties of GaN Films Grown on SiC/SOI Substrate

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

1313

終了ページ:

1316

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition Chen,J.L., Feng,Z.C., Zhang,X., Chua,S.J., Hou,Y.T., Lin,J. SPIE - The International Society for Optical Engineering	7 国際会議録 Optical Characterization of Ion-Implanted 4H-SiC Feng, Z.C., Yan, F., Chang, W.Y., Zhao, J.H., Lin, J. Trans Tech Publications
2 国際会議録 Optical Properties of GaN Films Grown Qrt SiC/Si Devrajan,J., Steckl,A.J., Tran,C.A., Stall,R.A. Trans Tech Publications	8 国際会議録 Optical Characterization of Ion-Implanted 4H-SiC Feng, Z.C., Yan, F., Chang, W.Y., Zhao, J.H., Lin, J. Trans Tech Publications
3 国際会議録 Microstructure and Optical Properties of GaN Films Grown on Porous SiC Substrate By MBE Yun, F., Reshchikov, M.A., He, L., King, T., Huang, D., Morkoc, H., Inoki, C.K., Kuan, T.S. Materials Research Society	9 国際会議録 Localized Vibrational Modes of Carbon-Hydrogen Complexes in MOCVD Grown GaN and AlGaN Thin Films Chen, J., Zhou, Q., Berhane, Y., Manasreh, M.O., Tran, C. A., Pophristic, M., Ferguson, I. T. Materials Research Society
4 国際会議録 Photoluminescence Characteristics of GaN Layers Grown on SOI Substrates and Relation to Material Properties Phillippe, A., Bru-Chevallier, C., Guillot, G., Cao, J., Pavlidis, D., Eisenbach, A. MRS - Materials Research Society	10 国際会議録 Spectroscopic Properties of Cubic SiC on Si Feng, Z.C., Talwar, D.N., Ferguson, I. Materials Research Society
5 国際会議録 Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques Feng,Z.C., Ferguson,I., Stall,R.A., Li,K., Shi,Y., Singh,H., Tone,K., Zhao,J.H., Wee,A.T.S., Tan,K.L., Adar,F., … Trans Tech Publications	11 国際会議録 An Investigation of Breakdown Mechanisms in Al(GaN)MSM Photodetectors Ferguson,I., Liang,S., Tran,C.A., Karlicek,R.F., Feng,Z.C., Lu,Y., Joseph,C. Trans Tech Publications
6 国際会議録 Photoluminescence and Raman Scatiering Characterization of GaN,InGaN aBd AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope Feng,Z.C., Schurman,M., Tran,C.A., Salagaj,T., Karlicek,B., Ferguson,I., Stall,R.A., Dyer,C.D., Williams,K.P.J., … Trans Tech Publications	12 国際会議録 High-performance AIGaN-GaN HEMT materials and devices grown and fabricated on Si substrates Z. H. Feng, J. Y. Yin, F. P. Yuan, B. Liu, Z. Feng Society of Photo-optical Instrumentation Engineers

1

2

3

4

5

6

7

8

9

10

11

12